Schottky barrier gate field effect transistor 肖脱基势结型场效应晶体管
Some factors influencing on its reliability are emphasized such as interdiffusion of gate Schottky contact and source/ drain Ohmic contact and surface effect. 重点介绍了影响其可靠性的因素如栅肖特基结和源/漏欧姆结的相互扩散及表面效应等。
The values of the Schottky barrier are evaluated and the results are useful for understanding the PTCR effect in polycrystalline ferroelectric semiconductors. 由此得出的结果,对理解多晶铁电半导体中的PTCR效应是有益的。
Schottky source and drain junctions are a promising structure to minimize the MOSFET short channel effect. 采用Schottky结源漏结构是克服传统MOSFET器件短沟效应的一种有效方法。
The formation of grain-boundary acceptor state, due to the substitution of Sr2+ ion on grain surface by the diffused Ag+ ion during the oxidizing annealing, plays an important role in the generation of Schottky barrier and resultant multifunction effect. 氧化热处理过程中Ag+离子低价取代晶粒表面的Sr2+离子而形成晶界受主态,是产生晶界Schottky势垒及复合功能效应的重要原因。
A number of special applications of ion implantation are described such as ion beam annealing ( IBA) effect, the enhancement of Schottky barrier height, gettering effect, the synthesis of SiO_2 films, and an improvement on proper-ties of the materials, etc. 描述了离子注入的几个特殊应用,其中包括离子束退火效应,增加肖特基势垒高度,注入吸杂效应,合成SiO2膜及离子注入材料改性等。
Anomalous Schottky effect under high electric field. 强场下的非常肖特基效应。
The enhancement of photocatalytic activity is attributed to energy band matching and Schottky barrier effect. 光催化性能的提高主要归因于异质结构的能带匹配和肖特基势垒。
On the high-temperature devices such as Schottky Barrier Diode ( SBD) and Metal Semiconductor Field Effect Transistor ( MESFET), the utilizing of ion-implantation can make fabrication processes simpler and the expenses cheaper. 在高温肖特基二极管(SBD)器件和金属半导体场效应晶体管(MESFET)器件的制备方面,离子注入具有使制备工艺简单、降低成本等优点。